Datasheet Summary
121 2N
(SILICON)
PNP silicon annular transistor for high-frequency general-purpose amplifier applications.
CASE 22
(TO.18) Collector connected to case
MAXIMUM RAilNGS
Rating
Symbol
Collector-Emitter Voltage Collector-Emitter Voltage Collector
- Base Voltage Emitter
- Base Voltage Total Device Dissipation @ TA=25°C
(Derate above 25DC)
VCEO
VCER VCB VEB PD
Total Device Dissipation @ TC",25°C P D
(Derate above 25°C)
TC =100°C
Operating & Stbrage Junction Temperature Range
TJI Tstg
Value
35 50 50 5.0 0.40 2.67 1.5 0.75 10 -65 to +200
Unit
Vdc Vdc Vdc Vdc Watts mW!OC Watts mW/oC DC
2-83
2N721 (continued)
ELECTRICAL CHARACTERISTICS cr. = 25'C ...... _ .. _ Characteristic
Symbol...
