The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
121 2N
(SILICON)
PNP silicon annular transistor for high-frequency general-purpose amplifier applications.
CASE 22
(TO.18) Collector connected to case
MAXIMUM RAilNGS
Rating
Symbol
Collector-Emitter Voltage Collector-Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Total Device Dissipation @ TA=25°C
(Derate above 25DC)
VCEO
VCER VCB VEB PD
Total Device Dissipation @ TC",25°C P D
(Derate above 25°C)
TC =100°C
Operating & Stbrage Junction Temperature Range
TJI Tstg
Value
35 50 50 5.0 0.40 2.67 1.5 0.75 10 -65 to +200
Unit
Vdc Vdc Vdc Vdc Watts mW!OC Watts
mW/oC DC
2-83
2N721 (continued)
ELECTRICAL CHARACTERISTICS cr. = 25'C ...... _ ..
2N721 Datasheet
