Motorola 2N721
PNP silicon annular transistor
| Part No. | 2N721 |
|---|---|
| Datasheet | 2N721 Download |
| Manufacturer |  Motorola |
| Description | PNP silicon annular transistor |
| Buy | Stock & Price |
ELECTRICAL CHARACTERISTICS
cr. = 25'C ...... _ .. _ Characteristic Symbol Min Max OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage" (Ic= 100 mAdc, IB = 0) Collector-Emitter Sustaining Voltage" (IC = 100 mAde, RaE :; 100 ohms) Collector-Base Breakdown Voltage (Ic = 100 /lAde, ~ = 0) Collector Cutoff Current (VCB = 30 Vde, ~ = 0) (VCB =30Vde, ~ =0, TA = 150● C) Emitter Cutoff Current (VBE = 2. 0 Vde, IC = 0) BV CEO(sus>* 35 - BVCER(suS)* 50 - BVCBO 50 - ICBO - 1.0 - 100 lEBO - 100 ON CHARACTERISTICS DC Current GaIn. (IC = 150 mAde, VCE = 10 Vde) (IC = 5. 0 mAde, ,VCE = 10 Vde) Collector-Emitter Saturation Voltage Ia (IC = 150 mAde, = 15 mAde) Base-Emitter Saturation Voltage (IC = 150 mAde, IB = 15 mAde)● hFE 20 45 15 - VCE(sat) - 1.5 VBE(sst>. - 1.3 SMALL SIGNAL CHARACTERISTICS Current-Gain - Bandwidth Product (IC = 50 mAde,. VCE'= 10 Vde, f = 20 MHz) Output Capacitance (VCB =10 Vde, ~ = 0, f = 100 kHz) Input Capacitance (VBE = O. 5 Vde, IC = 0) Input Impedance (IC =.1.0 mAde, VCB = 5.0 Vde, f = 1.0 kHz) = (IC = 5.
