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2N735 - NPN silicon annular transistors

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2N735 (SILICON) 2N736 2N739 2N740 NPN silicon annular transistors designed for smallsignal amplifier and general purpose switching applications. CASE 22 (TO·18) Collector connected to case MAXIMUM RATINGS Rating Collector-E':mitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Device Dissipation @ TA = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol 2N735 2N73g 2N736 2N740 V CEO VCB VEB IC PD TJ' Tstg 60 80 80 125 5.0 1.0 500 2.86 -65 to +200 Lead Temperature, 1/16" ± 1/32" froIn case for 10 s.