Datasheet Summary
2N735 (SILICON) 2N736 2N739 2N740
NPN silicon annular transistors designed for smallsignal amplifier and general purpose switching applications.
CASE 22
(TO- 18) Collector connected to case
MAXIMUM RATINGS
Rating
Collector-E':mitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Device Dissipation @ TA = 25°C
Derate above 25°C Operating and Storage Junction
Temperature Range
Symbol
2N735 2N73g 2N736 2N740
V CEO VCB VEB IC PD
TJ' Tstg
60 80 80 125
5.0 1.0 500 2.86 -65 to +200
Lead Temperature, 1/16" ± 1/32" froIn case for 10 s.
Unit
Vdc Vdc Vdc Adc mW mWrC
°c
2-90
2N735, 2N736, 2N739, 2N740 (Continued)
ELECTRICAL CHARACTERISTICS (TA = 25"C unless...