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834 2N
(SILICON)
2N835
NPN silicon epitaxial transistors for high- speed switching applications.
CASE 22
(TO·18)
Collector connected to case
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Peak
Total Device DisSipation @ TA = 25°C
Derate above 25°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Total Device Dissipation @ TC = 100°C
Derate above 100°C Operating and Storage Junction
Temperature Range
Symbol VCES VCB VEB
Ie
PD
PD
PD
TJ,Tstg
2N834 2N835
30
20
40
25
5.0
3.0
200
0.3 2.0
1.0 6.67
0.5 6.67
-65 to +175
Unit
Vdc Vdc Vdc mAdc Watt mwflC Watt mW/oC Watt mWflC °c
FIGURE 1 - TURN·ON AND TURN·OFF TIME MEASUREMENT CIRCUIT
FIGURE 2 - CHARGE STORAGE TIME CONSTANT MEASUREMENT CIRCUIT
'Oo
.
2N834 Datasheet
