2N869 - PNP silicon annular transistors

Motorola

Datasheet Details

Part number	2N869
Manufacturer	Motorola
File Size	91.02 KB
Description	PNP silicon annular transistors
Datasheet	2N869 Datasheet
Additional preview pages of the 2N869 datasheet.

📁 Similar Datasheet

2N869 - Bipolar PNP Device (Seme LAB)
2N869 - (2N8xx) PNP Metal Can (Central Semiconductor)
2N869A - Silicon Small Signal PNP Transistor (NES)
2N869A - Bipolar PNP Device (Seme LAB)
2N869A - (2N8xx) PNP Metal Can (Central Semiconductor)
2N860 - (2N8xx) PNP Metal Can (Central Semiconductor)
2N861 - (2N8xx) PNP Metal Can (Central Semiconductor)
2N862 - (2N8xx) PNP Metal Can (Central Semiconductor)
2N863 - (2N8xx) PNP Metal Can (Central Semiconductor)
2N864 - (2N8xx) PNP Metal Can (Central Semiconductor)

Other Datasheets by Motorola

2N869A - PNP SIlicon Small-Signal Transistor
2N827 - PNP germanium mesa transistor
2N828 - PNP germanium epitaxial mesa transistor
2N828A - PNP germanium epitaxial mesa transistors
2N829 - PNP germanium epitaxial mesa transistors
2N834 - NPN silicon epitaxial transistors
2N835 - NPN silicon epitaxial transistors
2N838 - PNP germanium epitaxial mesa transistor

Full PDF Text Transcription

Click to expand full text

2N869 (SILICON) 2N995 CASE 22 (TO· IS) Collector connected to case PNP silicon annular transistors for high-frequency general-purpose amplifier applications. MAXIMUM RATINGS Rating Base Voltage Collector- Emitter Voltage Emitter-Base Voltage Total Device Dissipation at 25°C Case Temperature at 100°C Case Temperature Derate above 25°C Total Device DisSipation at 25°C Ambient Temperature Derate above 25°C Storage Temperature Junction Temperature Symbol VCB VCEO VEB Po Po Tstg TJ Types 2N869 2N995 2N869 2N995 2N869 2N995 Both Types Both Types Both Types Both Types Value 25 20 18 15 5.0 4.0 Unit Vdc Vdc Vdc 1.2 Watts 0.68 Watt 6.86 mW/oC 0.36 2.

Published: Nov 8, 2018 |