2N915
2N915 is NPN silicon annular transistor manufactured by Motorola Semiconductor.
CASE 22, STYLE 1
TO-18 (TO-206AA)
GENERAL PURPOSE TRANSISTOR
NPN SILICON
Refer to 2N3946 for graphs.
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
@Total Device Dissipation TA = 25°C
Derate above 25°C
@Total Device Dissipation Tq = 25°C
Derate above 25°C
@Total Power Dissipation + 100°C Case
Operating and Storage Temperature Temperature Range
Symbol v CEO VCBO VEBO pd pd
Pd Tj, Tstg
Value 50 70
5.0 0.36 2.05
1.2 6.81 0.68
- 65 to + 200
Unit Vdc Vdc Vdc
Watts m W/°C
Watts m W/°C
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage(1) d C = 10 m Al B = 0)
Collector-Base Breakdown Voltage d C = 100 ^ A El = 0)
Emitter-Base Breakdown Voltage (IE = 10 m A, Ic = 0)
Collector Cutoff Current
(Vcb = 60 V, El = 0)
Collector Cutoff Current (VC B = 60 V, El = 0)
(Vcb = 60 V, El = 0, TA = + 150°C) ON CHARACTERISTICS
DC Current Gain d C = 10 m A Vc E =...
