2N916
2N916 is NPN silicon annular transistor manufactured by Motorola Semiconductor.
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Total Device Dissipation (S Ta = 25°C Derate above 25°C
@Total Device Dissipation Tc = 25°C
Derate above 25°C
Operating and Storage Junction Temperature Range
Symbol VCEO VCBO VEBO
Pd
Pd
TJ- Tstg
Value 25 45 5 0.36 2.06
1.2 6.9
- 65 to + 200
Unit Vdc Vdc Vdc
Watts m WVC
Watts m W/°C
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS Collector-Emitter Sustaining Voltaged) Oc = 30 m A, Ib = 0) Collector-Base Breakdown Voltage Oc = 10 m A, Ie = 0) Emitter-Base Breakdown Voltage (Ie = 10 fj A, lc = 0) Collector Cutoff Current (Vqb = 30 V, lg = 0) Collector Cutoff Current <& 150°C (Vcb = 30 V, lg = 0) ON CHARACTERISTICS
DC Current Gaind) c(l = 10 m A, V C E = 10 V) c(l = 10 m A, VC e = 1.0 V,
- 55°C)
Collector-Emitter Saturation Voltage
OC = 10 m A, Ib = 1.0 m A)
Base-Emitter Saturation Voltage
Oc = 10 m A, Ib = 1.0 m A)
SMALL-SIGNAL...
