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2N929 - NPN silicon annular transistors

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2N929, A (SILICON) 2N930, A 2N929JAN AVAILABLE 2N930JAN AVAILABLE NPN silicon annular transistors for low-level, lownoise amplifier applications. CASE 22 (TO·18) Collector connected to C8se MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating Junction Temperature Range Storage Temperature Range VCEO VCB VEB IC PD PD TJ T stg 2N929 2N929A 2N930 2N930A 45 60 45 60 5.0 6.0 30 0.5 3.33 1.