2N929
2N929 is NPN silicon annular transistors manufactured by Motorola Semiconductor.
2N929, A (SILICON) 2N930, A
2N929JAN AVAILABLE
2N930JAN AVAILABLE
NPN silicon annular transistors for low-level, lownoise amplifier applications.
CASE 22
(TO- 18) Collector connected to C8se
MAXIMUM RATINGS
Rating
Symbol
Collector-Emitter Voltage Collector-Base Voltage
Emitter-Base Voltage Collector Current
Total Device Dissipation @ TA = 25°C Derate above 25°C
Total Device Dissipation @ TC = 25°C Derate above 25°C
Operating Junction Temperature Range Storage Temperature Range
VCEO VCB VEB IC PD
TJ T stg
2N929 2N929A 2N930 2N930A
5.0 6.0
0.5 3.33
1.8 12 -65to + 175
-65 to +200
Unit
Vdc Vdc Vdc m Adc
W m W/o C Watt m W/o C
°c °c
2-124
2N929, A, 2N930, A (continued)
= ELECTRICAL CHARACTERISTICS (TA 2S'C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage 111 (IC = 10 m Ade, IB = 0)
BVCEO...
