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2N929, A (SILICON) 2N930, A
2N929JAN AVAILABLE
2N930JAN AVAILABLE
NPN silicon annular transistors for low-level, lownoise amplifier applications.
CASE 22
(TO·18) Collector connected to C8se
MAXIMUM RATINGS
Rating
Symbol
Collector-Emitter Voltage Collector-Base Voltage
Emitter-Base Voltage Collector Current
Total Device Dissipation @ TA = 25°C Derate above 25°C
Total Device Dissipation @ TC = 25°C Derate above 25°C
Operating Junction Temperature Range Storage Temperature Range
VCEO VCB VEB IC PD
PD
TJ T stg
2N929 2N929A 2N930 2N930A
45
60
45
60
5.0 6.0
30
0.5 3.33
1.