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2N978 - PNP SILICON ANNULAR TRANSISTOR

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2N978 (SILICON) PNP SILICON ANNULAR TRANSISTOR designed for general-purpose amplifier applications_ • Collector-Emitter Sustaining Voltage - VCEO(sus) =20 Vdc (Min) @ IC = 100 mAdc PNPSILICON AMPLIFIER TRANSISTOR *MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltate Collector Current Total Device Dissipation@TA = 25°C Derate above 25°C Total Device Dissipation @TC ~ 25°C Derate above 25°C Operating and Storage Junction Temperature Range Svmbol VCEO VCB VEB IC PD PD TJ,Tstg Value 20 30 5_0 600 0.33 2.64 1.25 10 -65 to + 200 Unit Vde Vde Vde mAde Watt mW/oC Watts mW/oC °c -Indicates JEDEC Registered Data. l ~::: l~r I DIAl OIA -TI w,o ~OIA j 0.500 Pin 1. Emitter 2. Base 1 3.
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