Motorola 2N985
PNP germanium epitaxial mesa transistor
| Part No. | 2N985 |
|---|---|
| Datasheet | 2N985 Download |
| Manufacturer |  Motorola |
| Description | PNP germanium epitaxial mesa transistor |
| Buy | Stock & Price |
MAXIMUM RATINGS
Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Junction Temperature storage Temperature Device Dissipation @ TC = 25°C Derate above 25°C Device Dissipation @ TA =25°C Derate above 25°C Symbol VCB VCEO VEB Ie TJ Tstg PD PD Value 15 7.0 3.0 200 100 -65 to +100 300 4.0 150 2.0 Unit Vdc Vdc Vdc mAdc °c °c mW mW/oC mW mW/oC SWITCHING TIME TEST CIRCUIT Vcc= -lO.3V +l.2::'tf-__ V" 1 KIl -5.5V INPUT PULSE tt,.::"='": 1 1 ns ns PW~200ns I ~--------~---------oVoo, OSCILLOSCOPE RISE TIME"", 1 ns I _.1._ TOTAL COLLECTOR SHUNT ,~, C, CAPACITANCE"" 6 pF I I I ~ 2-142 2N985 (continued)ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted) Characteristic Collector-Base Breakdown Voltage (IC = 100 !lAdC, IE = 0) Collector-Emitter Breakdown Voltage (IC = 5 mAde, IB = 0) Collector-Emitter Breakdown Voltage (Ie = 100 !lAde, RBE = 0) Emitter-Base Breakdown Voltage (IE = 100 !lAde, IC = 0) Collector Cutoff Current (VCB = 5 Vde, IE = 0)...