3N100E Datasheet Mtb3n100e

Manufacturer: Motorola Semiconductor (now NXP Semiconductors)

Overview: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB3N100E/D Designer's TMOS E-FET .

Datasheet Details

Part number	3N100E
Manufacturer	Motorola Semiconductor (now NXP Semiconductors)
File Size	207.36 KB
Description	MTB3N100E
Datasheet	3N100E_Motorola.pdf

ates the mathematics. And finally, MOSFETs have finite internal gate resistance which effectively adds to the resistance of the driving source, but the internal resistance is difficult to measure and, consequently, is not specified. The resistive switching time variation versus gate resistance (Figure 9) shows how typical switching performance is affected by the parasitic circuit elements. If the parasitics were not present, the slope of the curves would maintain a value of unity regardless of t.