Motorola 4N35
The 4N35, 4N36 and 4N37 devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector.| Part No. | 4N35 |
|---|---|
| Datasheet | 4N35 Download |
| Manufacturer |  Motorola |
| Description | 6-Pin DIP Optoisolators |
| Buy | Stock & Price |
APPLICATIONS
● General Purpose Switching Circuits● Interfacing and coupling systems of different potentials and impedances
● Regulation Feedback Circuits
● Monitor & Detection Circuits
● Solid State Relays
MAXIMUM RATINGS
(TA = 25°C unless otherwise noted) Rating INPUT LED Reverse Voltage Forward Current — Continuous LED Power Dissipation @ TA = 25°C with Negligible Power in Output Detector Derate above 25°C OUTPUT TRANSISTOR Collector–Emitter Voltage Emitter–Base Voltage Collector–Base Voltage Collector Current — Continuous Detector Power Dissipation @ TA = 25°C with Negligible Power in Input LED Derate above 25°C TOTAL DEVICE Isolation Source Voltage(1) (Peak ac Voltage, 60 Hz, 1 sec Duration) Total Device Power Dissipation @ TA = 25°C Derate above 25°C Ambient Operating Temperature Range(2) Storage Temperature Range(2) Soldering Temperature (10 sec, 1/16″ from case) VISO PD TA Tstg TL 7500 250 2.94 – 55 to +100 – 55 to +150 260 Vac(pk) mW mW/°C °C °C °C VCEO VEBO VCBO IC PD 30 7 70...
