BAS16WT1 Datasheet PDF

MAXIMUM RATINGS

(TA = 25°C) Rating Continuous Reverse Voltage Recurrent Peak Forward Current Peak Forward Surge Current Pulse Width = 10 µs Total Power Dissipation, One Diode Loaded TA = 25°C Derate above 25°C Mounted on a Ceramic Substrate (10 x 8 x 0.6 mm) Operating and Storage Junction Temperature Range Symbol VR IR IFM(surge) PD Max 75 200 500 200 1.6 Unit V mA mA mW mW/°C 1 2 CASE 419–02, STYLE 2 SC–70/SOT–323 TJ, Tstg – 55 to +150 °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient One Diode Loaded Mounted on a Ceramic Substrate (10 x 8 x 0.6 mm) Symbol RθJA Max 0.625 Unit °C/mW DEVICE MARKING A6

ELECTRICAL CHARACTERISTICS

(TA = 25°C unless otherwise noted) Characteristic Forward Voltage (IF = 1.0 mA) (IF = 10 mA) (IF = 50 mA) (IF = 150 mA) Reverse Current (VR = 75 V) (VR = 75 V, TJ = 150°C) (VR = 25 V, TJ = 150°C) Capacitance (VR = 0, f = 1.0 MHz) Reverse Recovery Time (IF = IR = 10 mA, RL = 50 Ω) (Figure 1) Stored Charge (IF = 10 mA to VR = 6.0 V,...