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BAW56WT1 - Dual Switching Diode

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BAW56WT1/D Dual Switching Diode CATHODE 1 3 ANODE 2 BAW56WT1 Motorola Preferred Device MAXIMUM RATINGS (TA = 25°C) Rating Reverse Voltage Forward Current Peak Forward Surge Current Symbol VR IF IFM(surge) Max 70 200 500 Unit Vdc mAdc mAdc 1 2 3 CASE 419–02, STYLE 4 SC–70/SOT–323 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 200 1.6 RqJA PD 0.625 300 2.