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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Amplifier Transistors
PNP Silicon
COLLECTOR 1
BC556,B BC557,A,B,C
BC558B
2 BASE
3 EMITTER
MAXIMUM RATINGS
Rating
Symbol BC556 BC557 BC558 Unit
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C Derate above 25°C
VCEO –65 –45 –30 Vdc
VCBO –80 –50 –30 Vdc
VEBO
–5.0
Vdc
IC
–100
mAdc
PD 625 mW 5.0 mW/°C
Total Device Dissipation @ TC = 25°C Derate above 25°C
PD
1.5 Watt 12 mW/°C
Operating and Storage Junction Temperature Range
TJ, Tstg
– 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient RqJA 200 °C/W
Thermal Resistance, Junction to Case
RqJC
83.
BC558 Datasheet
