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BCW30 - GENERAL PURPOSE TRANSISTOR

Download the BCW30 datasheet PDF. This datasheet also covers the BCW29 variant, as both devices belong to the same general purpose transistor family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (BCW29-Motorola.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BCW29,30 CASE 318-02/03, STYLE 6 SOT-23 (TO-236AA/AB) GENERAL PURPOSE TRANSISTOR PNP SILICON MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage — Collector Current Continuous Symbol vCEO VCBO vESO ic THERMAL CHARACTERISTICS Characteristic *Total Device Dissipation, T/ = 25°C Derate above 25°C Symbol PD Storage Temperature Tstg •Thermal Resistance Junction to Ambient RflJA mm •Package mounted on 99.5% alumina 10 x 8 x 0.6 Value 20 ... 30 5,0 100 Max 350 2.8 150 357 Unit Vdc Vdc Vdc mAdc Unit mW mW/°C °C °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) I OFF CHARACTERISTICS Characteristic Collector-Emitter Breakdown Voltage dC = 2.