BCW32 Datasheet PDF

MAXIMUM RATINGS

Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage — Collector Current Continuous Symbol VCEO VCBO Vebo ic THERMAL CHARACTERISTICS Characteristic Symbol
●Total Device Dissipation, Ta = 25°C PD Derate above 25°C Storage Temperature Tstg
●Thermal Resistance Junction to Ambient R 8JA
●Package mounted on 99.5% alumina 10 x 8 x 0.6 mm. Value 20 30 5.0 100 Max 350 2.8 150 357 Unit Vdc Vdc Vdc mAdc Unit mW rnWTC °C °C/W BCW31,32,33 CASE 318-02/03, STYLE 6 SOT-23 (TO-236AA/AB) GENERAL PURPOSE TRANSISTOR NPN SILICON

ELECTRICAL CHARACTERISTICS

(TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage c (l = 2.0 mAdc, Ib = 0) Collector-Base Breakdown Voltage c (l = 10 /iAdc, Ib = 0) Emitter-Base Breakdown Voltage E (l = 10 ^Adc, lc = 0) ON CHARACTERISTICS DC Current Gain (IC = 2.0 mAdc, Vce = 5.0 Vdc) BCW31 BCW32 BCW33 Collector-Emitter Saturation Voltage (IC = 10 mAdc, Ib = 0-5 mAdc) Base-Emitter On Voltage...