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BCX46 - HIGH CURRENT TRANSISTORS

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous @Total Device Dissipation Ta = 25°C Derate above 25°C @Total Device Dissipation Tq = 25°C Derate above 25°C Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Symbol BCX BCX BCX 46 48 50 VCEO VCBO VEBO 45 60 80 45 60 80 5.0 ic 1.0 PD 625 5.0 pd Tj, T stg 1.5 12 -55 to +150 Symbol R«JC Rwc Max 83.3 200 Unit Vdc Vdc Vdc Adc mW mW/°C Watt mW/°C °C Unit °C/W °C/W BCX46 BCX48 BCX50 CASE 29-02, STYLE 17 TO-92 (TO-226AA) HIGH CURRENT TRANSISTORS PIMP SILICON Refer to MPSA55 for graphs.