BCX53 Datasheet | Motorola Semiconductor

BCX51 BCX52 BCX53 CASE 345-01, STYLE 1 SOT-89 GENERAL PURPOSE TRANSISTOR PNP SILICON MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current - Collector Current Continuous Operating and Storage Junction Temperature Range Symbol v CEO VCER v CBO v EBO 'C TJ- Tstg BCX51 BCX52 BCX53 45 60 80 45 60 100 45 60 100 5.0 5.0 5.0 0.1 0.1 0.1 1.0 1.0 1.0 -55 to +150 Unit V V V V A A °C THERMAL CHARACTERISTICS Characteristic - Total Device Dissipation, TA = 25°C Derate above 25°C Symbol PD Storage Temperature Tstg - Thermal Resistance Junction to Ambient R0JA mm- Package mounted on 99.5% alumina 10 x 12 x 0.6 Max 1.0 8.0 150 125 Unit Watt m W/°C °C °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) OFF CHARACTERISTICS Characteristic Collector-Emitter Breakdown Voltage d C = 10 m A) d C = 10 m A) (IC = 10 m A) Collector-Base Breakdown Voltage d C = 10^) d C = 10 n A) d C = 10 /x...