BDB01D Datasheet PDF

MAXIMUM RATINGS

Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCES VEBO IC PD BDB01C 80 80 5.0 0.5 1.0 8.0 2.5 20 – 55 to +150 BDB01D 100 100 Unit Vdc Vdc Vdc Adc Watt mW/°C Watt mW/°C °C CASE 29–05, STYLE 1 TO–92 (TO–226AE) PD TJ, Tstg THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 125 50 Unit °C/W °C/W

ELECTRICAL CHARACTERISTICS

(TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector – Emitter Voltage (IC = 10 mA, IB = 0) Collector Cutoff Current (VCB = 80 V, IE = 0) (VCB = 100 V, IE = 0) Emitter Cutoff Current (IC = 0, VEB = 5.0 V) V(BR)CEO BDB01C BDB01D ICBO BDB01C BDB01D IEBO — — — 0.01 0.01 100 nAdc 80 100 — — Vdc mAdc Motorola Small–Signal Transistors, FETs and Diodes Device Data © Motorola, Inc.