Motorola BDC02D
One Watt Amplifier Transistor
MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg BDC02D –100 –100 –5.0 –0.5 1.0 8.0 2.5 20 – 55 to +150 Unit Vdc Vdc Vdc Adc Watts mW/°C Watts mW/°C °C CASE 29–05, STYLE 14 TO–92 (TO–226AE) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 125 50 Unit °C/W °C/WELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector – Emitter Voltage (IC = –10 mA, IB = 0) Collector Cutoff Current (VCB = –100 V, IE = 0) Emitter Cutoff Current (IC = 0, VEB = –5.0 V) V(BR)CEO ICBO IEBO –100 — — — –0.1 –100 Vdc mAdc nAdc Motorola Small–Signal Transistors, FETs and Diodes Device Data © Motorola, Inc.