Motorola BFS17LT1
RF TRANSISTOR NPN SILICON
| Part No. | BFS17LT1 |
|---|---|
| Datasheet | BFS17LT1 Download |
| Manufacturer |  Motorola |
| Description | RF TRANSISTOR NPN SILICON |
| Buy | Stock & Price |
MAXIMUM RATINGS
Rating Collector–Emitter Voltage Collector–Base Voltage Maximum Junction Temperature Symbol VCEO VCBO TJmax Value 15 25 150 Unit Vdc Vdc °C BFS17LT1 RF TRANSISTOR NPN SILICON THERMAL CHARACTERISTICS Characteristic Total Device Dissipation, TA = 25°C Derate above 25°C (1) Storage Temperature Thermal Resistance Junction to Ambient (1) Symbol PD Tstg RθJA Max 350 2.8 – 55 to +150 357 Unit mW mW/°C °C °C/W CASE 318–08, STYLE 6 SOT–23 LOW PROFILE (TO–236AA/AB) DEVICE MARKING BFS17LT1 = E1ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 10 mA) Collector–Base Breakdown Voltage (IC = 100 µA) Collector Cutoff Current (VCE = 10 V) Collector Cutoff Current (VCB = 10 V) Emitter Cutoff Current (VEB = 4 V) V(BR)CEO V(BR)CBO ICEO ICBO IEBO 15 25 — — — — — — — — — — 25 25 100 Vdc Vdc nA nA µA ON CHARACTERISTICS DC Current Gain (IC = 2 mA, VCE = 1 V) (IC = 25 mA, VCE = 1 V...