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BFW92A - HIGH FREQUENCY TRANSISTOR

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BFW92A CASE 317A-01, STYLE 2 HIGH FREQUENCY TRANSISTOR NPN SILICON MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous @Total Device Dissipation T"c = 105°C Derate above 105"C Storage Temperature Symbol vCEO v CBO VEBO 'C PD Tstg Value 15 25 2.5 35 180 4.0 -65 to 150 Unit Vdc Vdc Vdc mAdc mW mW/°C °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case(1) "we 250 °CA/V (1) Case temperature measured on collector lead immediately adjacent to body of package. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.! Characteristic OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage dC = 1.0 mAdc, Ib = 0) Collector-Base Breakdown Voltage c(l = 0.