| Part number | BFY84 |
|---|---|
| Datasheet | BFY84-Motorola.pdf |
| File Size | 31.26 KB |
| Manufacturer | Motorola Semiconductor (now NXP Semiconductors) |
| Description | DUAL AMPLIFIER TRANSISTOR |
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Tstg -65 to +200 °C BFY84 CASE 654-07 DUAL AMPLIFIER TRANSISTOR NPN SILICON (Ta = 25°C unless otherwise noted.) Characteristic Symbol Min Max Unit | ||] OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage(1) (lc = 3.0 mA, Ir. = 0) Collector-Base Breakdown Voltage (lc = 1.0 uA, l£ = 0) Emitter-Base Breakdown Voltage (Ir; = 10 uA, lc = 0) Collector Cutoff Current (Vqb = 15 Vdc, Ie = 0) (VcB = 15 Vdc, Ie = 0, Ta =...
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
BFY84 | SILICON PLANAR EPITAXIAL NPN TRANSISTOR | Seme LAB |
| SGS-ATES | BFY84 | NPN Transistor | SGS-ATES |
See all Motorola Semiconductor (now NXP Semiconductors) datasheets
| Part Number | Description |
|---|---|
| BFY81 | DUAL AMPLIFIER TRANSISTOR |
| BFY50 | GENERAL PURPOSE TRANSISTOR |
| BFY51 | GENERAL PURPOSE TRANSISTOR |
| BFY52 | GENERAL PURPOSE TRANSISTOR |
| BFY90 | HIGH FREQUENCY TRANSISTOR |
