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BFY84 - DUAL AMPLIFIER TRANSISTOR

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MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Total Device Dissipation @Ta = 25°C Derate above 25°C Total Device Dissipation @Tc = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol Value Unit VCEO 12 Vdc VCBO 30 Vdc VEBO •c PD 3 Vdc 30 mAdc One Die Both Die 575 3.29 625 mW 3.57 mW/°C pd 1.8 2.5 Watts 10.3 14.3 mW/°C Tj. Tstg -65 to +200 °C BFY84 CASE 654-07 DUAL AMPLIFIER TRANSISTOR NPN SILICON ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.) Characteristic Symbol Min Max Unit | ||] OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage(1) (lc = 3.0 mA, Ir. = 0) Collector-Base Breakdown Voltage (lc = 1.
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