Motorola BUV21
40 AMPERES NPN SILICON POWER METAL TRANSISTOR
MAXIMUM RATINGS
Rating Symbol Value 200 250 7 250 240 40 50 8 Unit Vdc Vdc Vdc Vdc Vdc Adc Apk Adc Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage VCEO(sus) VCBO VEBO VCEX Collector–Emitter Voltage (VBE = –1.5 V) Collector–Emitter Voltage (RBE = 100 Ω) Collector–Current — Continuous — Peak (pw 10 ms) Base–Current continuous Total Power Dissipation @ TC = 25_C VCER IC ICM Operating and Storage Junction Temperature Range IB PD TJ, Tstg 150 Watts – 65 to 200 _C THERMAL CHARACTERISTICS Characteristic Symbol θJC Max 0.7 Unit Thermal Resistance, Junction to Case _C/W 1.0 0.8 DERATING FACTOR 0.6 0.4 0.2 0 40 80 120 TC, TEMPERATURE (°C) 160 200 Figure 1. Power Derating SWITCHMODE is a trademark of Motorola, Inc. REV 7 © Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 1 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ BUV21 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ...