D2N05Z - TMOS Dual N-Channel

Features

hievable with board mounted components. Most power electronic loads are inductive; the data in the figure is taken with a resistive load, which approximates an optimally snubbed inductive load. Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces switching losses. C,.

Motorola

Datasheet Details

Part number	D2N05Z
Manufacturer	Motorola
File Size	187.56 KB
Description	TMOS Dual N-Channel
Datasheet	D2N05Z Datasheet
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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMDF2N05ZR2/D ™Designer's Data Sheet Medium Power Surface Mount Products TMOS Dual N-Channel with Monolithic Zener ESD Protected Gate EZFETs™ are an advanced series of power MOSFETs which utilize Motorola’s High Cell Density TMOS process and contain monolithic back–to–back zener diodes. These zener diodes provide protection against ESD and unexpected transients. These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain–to–source diode has a very low reverse recovery time.

Published: Feb 9, 2015 |