Datasheet Details
| Part number | EB105 |
|---|---|
| Manufacturer | Motorola Semiconductor (now NXP Semiconductors) |
| File Size | 205.59 KB |
| Description | 800MHz AMPLIFIER |
| Datasheet | EB105-Motorola.pdf |
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Overview: MOTOROLA Order this document by EB105/D SEMICONDUCTOR ENGINEERING BULLETIN EB105 A 30 WATT, 800 MHz AMPLIFIER DESIGN Prepared by: Alan Wood Semiconductor Product Sector INTRODUCTION Simplicity and pactness mark the design of this 30 Watt amplifier des igned for the 800 MHz mobile munications band. The amplifier uses the internally matched MRF844 transistor in a mon base Class C configuration providing a minimum of 5.0 dB gain over a fixed tuned bandwidth of 800 to 870 MHz at 12.5 volts. Lower manufacturing costs are of prime concern to land mobile equipment suppliers and single-board, fixed tuned transmitter amplifier designs are being increasingly mon. Two versions are therefore presented, one using glass teflon laminate and the second using less expensive G-10 board. (Figure 1).
| Part number | EB105 |
|---|---|
| Manufacturer | Motorola Semiconductor (now NXP Semiconductors) |
| File Size | 205.59 KB |
| Description | 800MHz AMPLIFIER |
| Datasheet | EB105-Motorola.pdf |
|
|
|
The circuit is designed to be driven from a 50 ohm source and be terminated in a nominal 50 ohm load.
Both input and output matching networks are similar in design and consist of two element short-step Chebyshev transmission line transformations fabricated as microstrip lines (Reference 1).
Mini-Underwood mica capacitors are used at the input and output of the transistor transforming the plex inductive impedance to an essentially non-reactive real impedance over most of the band.
| Part Number | Description |
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