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EB105 - 800MHz AMPLIFIER

General Description

The circuit is designed to be driven from a 50 ohm source and be terminated in a nominal 50 ohm load.

Both input and output matching networks are similar in design and consist of two element short-step Chebyshev transmission line transformations fabricated as microstrip lines (Reference 1).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOTOROLA Order this document by EB105/D SEMICONDUCTOR ENGINEERING BULLETIN EB105 A 30 WATT, 800 MHz AMPLIFIER DESIGN Prepared by: Alan Wood Semiconductor Product Sector INTRODUCTION Simplicity and compactness mark the design of this 30 Watt amplifier des igned for the 800 MHz mobile communications band. The amplifier uses the internally matched MRF844 transistor in a common base Class C configuration providing a minimum of 5.0 dB gain over a fixed tuned bandwidth of 800 to 870 MHz at 12.5 volts. Lower manufacturing costs are of prime concern to land mobile equipment suppliers and single-board, fixed tuned transmitter amplifier designs are becoming increasingly common. Two versions are therefore presented, one using glass teflon laminate and the second using less expensive G-10 board.