Motorola H11G2
The H11G1, H11G2 and H11G3 devices consist of gallium arsenide IREDs optically coupled to silicon photodarlington detectors which have integral base–emitter resistors. The on–chip resistors improve higher temperature leakage characteristics. Designed with high isolation, high CTR, high voltage and low leakage, they provide excellent performance.- Channels : 1
- Max Operating Temp : 100°C
- Min Operating Temp : -55°C
Source:
Octopart
| Part No. | H11G2 |
|---|---|
| Datasheet | H11G2 Download |
| Manufacturer |  Motorola |
| Description | 6-Pin DIP Optoisolator |
| Buy | Stock & Price |
APPLICATIONS
● Interfacing and coupling systems of different potentials and impedances● Phase and Feedback Controls
● General Purpose Switching Circuits
● Solid State Relays
MAXIMUM RATINGS
(TA = 25°C unless otherwise noted) Rating INPUT LED Reverse Voltage Forward Current — Continuous Forward Current — Peak Pulse Width = 300 µs, 2% Duty Cycle LED Power Dissipation @ TA = 25°C Derate above 25°C OUTPUT DETECTOR Collector–Emitter Voltage H11G1 H11G2 H11G3 VCEO 100 80 55 7 150 150 1.76 Volts VR IF IF PD 6 60 3 120 1.41 Volts mA Amps mW mW/°C 3 2 Symbol Value Unit 1 H11G2* [CTR = 1000% Min] H11G3 [CTR = 200% Min] *Motorola Preferred Devices STYLE 1 PLASTIC 6 1 STANDARD THRU HOLE CASE 730A–04 SCHEMATIC 6 5 4 PIN 1. 2. 3. 4. 5. 6. ANODE CATHODE N.C. EMITTER COLLECTOR BASE Emitter–Base Voltage Collector Current — Continuous Detector Power Dissipation @ TA = 25°C Derate above 25°C TOTAL DEVICE Total Device Power Dissipation @ TA = 25°C Derate above 25°C Operating Junction Temperature Range(2)...
