Motorola M4N26
The M4N26 device consists of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector.| Part No. | M4N26 |
|---|---|
| Datasheet | M4N26 Download |
| Manufacturer |  Motorola |
| Description | 6-Pin DIP Optoisolators Transistor Output |
| Buy | Stock & Price |
APPLICATIONS
● Meets or Exceeds All JEDEC Registered SpecificationsAPPLICATIONS
● General Purpose Switching Circuits● Interfacing and coupling systems of different potentials and impedances
● I/O Interfacing
● Solid State Relays SCHEMATIC 6 1 STANDARD THRU HOLE STYLE 1 PLASTIC
MAXIMUM RATINGS
(TA = 25°C unless otherwise noted) Rating INPUT LED Reverse Voltage Forward Current — Continuous LED Power Dissipation @ TA = 25°C with Negligible Power in Output Detector Derate above 25°C OUTPUT TRANSISTOR Collector–Emitter Voltage Emitter–Collector Voltage Collector–Base Voltage Collector Current — Continuous Detector Power Dissipation @ TA = 25°C with Negligible Power in Input LED Derate above 25°C TOTAL DEVICE Isolation Surge Voltage(1) (Peak ac Voltage, 60 Hz, 1 sec Duration) Total Device Power Dissipation @ TA = 25°C Derate above 25°C Ambient Operating Temperature Range(2) Storage Temperature Range(2) Soldering Temperature (10 sec, 1/16″ from case) VISO PD TA Tstg TL 7500 250 2.94 – 55 to...
