Motorola MBD101
SILICON SCHOTTKY BARRIER DIODES
| Part No. | MBD101 |
|---|---|
| Datasheet | MBD101 Download |
| Manufacturer |  Motorola |
| Description | SILICON SCHOTTKY BARRIER DIODES |
| Buy | Stock & Price |
MAXIMUM RATINGS
MBD101 Rating Reverse Voltage Forward Power Dissipation @ TA = 25°C Derate above 25°C Junction Temperature Storage Temperature Range Symbol VR PF 280 2.2 TJ Tstg +150 – 55 to +150 225 1.8 mW mW/°C °C °C MMBD101LT1 Value 7.0 Unit Volts CASE 318 – 08, STYLE 8 SOT– 23 (TO – 236AB) 1 2 DEVICE MARKING MMBD101LT1 = 4MELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted) Characteristic Reverse Breakdown Voltage (IR = 10 µAdc) Diode Capacitance (VR = 0, f = 1.0 MHz, Note 1) Forward Voltage(1) (IF = 10 mAdc) Reverse Leakage (VR = 3.0 Vdc) Symbol V(BR)R CT VF IR Min 7.0 — — — Typ 10 0.88 0.5 0.02 Max — 1.0 0.6 0.25 Unit Volts pF Volts µAdc NOTE: MMBD101LT1 is also available in bulk packaging. Use MMBD101L as the device title to order this device in bulk. Preferred devices are Motorola recommended choices for future use and best overall value. Thermal Clad is a registered trademark of the Berquist Company. Motorola Small–Signal Transistors, FETs and Diodes Device Data © Motorola, Inc.
