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MBR1520 - SCHOTTKY BARRIER RECTIFIERS

Key Features

  • epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low-voltage, high-frequency inverters, free wheeling diodes, and polarity protection diodes.
  • Extremely Low vF.
  • Low Stored Charge, Majority Carrier Conduction.
  • Low Power Loss/High Efficiency.
  • High Surge Capacity.

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Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
MBR150 (MBR150 / MBR160) Axial Lead Rectifiers
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MBR1520 MBR1530 MBR1540 ® MOTOROLA HOT CARRIER POWER RECTIFIER · .. employing the Schottky Barrier principle in a large area metalto-silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low-voltage, high-frequency inverters, free wheeling diodes, and polarity protection diodes.