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MBR2520 - SCHOTTKY BARRIER RECTIFIERS

Key Features

  • epitaxial con.
  • struction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low.
  • voltage, high.
  • frequency inverters, free wheeling diodes, and polarity protection diodes.
  • Extremely Low vF.
  • Low Power Loss/High.
  • Low Stored Charge, Majority Efficiency Carrier Conduction.
  • High Surge Capacity.

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Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
MBR2515L SWITCHMODE Power Rectifier
MBR2530 SCHOTTKY BARRIER RECTIFIERS
MBR2535 SWITCHMODE Power Rectifiers
MBR2535CT SWITCHMODE Power Rectifiers
MBR2535CTL SWITCHMODE Power Rectifier

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MBR2520 MBR2530 MBR2540 ® MOTOROLA HOT CARRIER POWER RECTIFIER · .. employing the Schottky Barrier principle in a large area metal·to· silicon power diode. State of the art geometry features epitaxial con· struction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low·voltage, high·frequency inverters, free wheeling diodes, and polarity protection diodes.