MBR2530 Overview
MBR2520 MBR2530 MBR2540 ® MOTOROLA HOT CARRIER POWER RECTIFIER · .. employing the Schottky Barrier principle in a large area metal·to· silicon power diode. State of the art geometry features epitaxial con· struction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low·voltage, high·frequency inverters, free wheeling diodes, and polarity protection diodes. • Extremely Low vF • Low Power Loss/High • Low Stored Charge, Majority Efficiency Carrier Conduction • High Surge Capacity SCHOTTKY BARRIER Peak Operating Junction Temperature (Forward Current Applied) TJ, T stg - - - 6 5 to + 1 2 5 _ .TJ (pk) •150 °c °c THERMAL CHARACTERISTICS Characteristic
MBR2530 Key Features
- Extremely Low vF
- Low Power Loss/High
- Low Stored Charge, Majority
- High Surge Capacity
- 6 5 to + 1 2 5 _
- ReJA PF(AVI
- ReJA PR(AVI (11 where
