MBR2535CTL Description
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MBR2535CTL/D SWITCHMODE™ Power Rectifier . employing the Schottky Barrier principle in a large metal to silicon power diode. State of the art geometry.
MBR2535CTL Key Features
- Very Low Forward Voltage (0.55 V Maximum @ 25 Amps)
- Matched Dual Die Construction (12.5 A per Leg or 25 A per Package)
- Guardring for Stress Protection
- Highly Stable Oxide Passivated Junction (125°C Operating Junction Temperature)
- Epoxy Meets UL94, VO at 1/8″ Mechanical Characteristics
- Case: Epoxy, Molded
- Weight: 1.9 grams (approximately)
- Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable
- Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds
- Shipped 50 units per plastic tube