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MBR3045ST page 2
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MBR3045ST Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MBR3045ST/D Advance Information SWITCHMODE™ Power Rectifier . using the Schottky Barrier principle with a platinum barrier metal. This state of the art device has the following.

MBR3045ST Key Features

  • Dual Diode Construction
  • Terminals 1 and 3 May Be Connected for Parallel Operation at Full Rating
  • 45 V Blocking Voltage
  • Low Forward Voltage Drop
  • Guardring for Stress Protection
  • 150°C Operating Junction Temperature
  • Guaranteed Reverse Avalanche Mechanical Characteristics
  • Case: Epoxy, Molded
  • Weight: 1.9 grams (approximately)
  • Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable