Datasheet Summary
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MBR320/D
Axial Lead Rectifiers
. . . employing the Schottky Barrier principle in a large area metal- to- silicon power diode. State- of- the- art geometry Features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low- voltage, high- frequency inverters, free wheeling diodes, and polarity protection diodes.
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- - Extremely Low vF Low Power Loss/High Efficiency Highly Stable Oxide Passivated Junction Low Stored Charge, Majority Carrier Conduction
MBR320 MBR330 MBR340 MBR350 MBR360
MBR340 and MBR360 are Motorola Preferred Devices
Mechanical Characteristics:
- Case:...
