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MBR5025L - Power Rectifier

Key Features

  • Very Low Forward Voltage Drop (Max 0.58 V @ 100°C).
  • Guardring for Stress Protection and High dv/dt Capability (> 10 V/ns).
  • Guaranteed Reverse Avalanche.
  • 150°C Operating Junction Temperature.
  • Specially Designed for.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MBR5025L/D Advance Information SWITCHMODE™ Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: • Very Low Forward Voltage Drop (Max 0.58 V @ 100°C) • Guardring for Stress Protection and High dv/dt Capability (> 10 V/ns) • Guaranteed Reverse Avalanche • 150°C Operating Junction Temperature • Specially Designed for SWITCHMODE Power Supplies with Operating Frequency up to 300 kHz Mechanical Characteristics • Case: Epoxy, Molded • Weight: 4.