Datasheet Summary
® MOTOROLA
IN5823,lN5824 IN5825
MBRS82S,H, H1
Designers Data Sheet
HOT CARRIER POWER RECTIFIERS
- .. employing the Schottky Barrier principle in a large area metal- to-silicon power diode. State-of-the-art geometry Features epitaxial construction with oxide passivation and metal overlap contact.
Ideally suited for use as rectifiers in low-voltage, high-frequency inverters, free-wheeling diodes, and polarity-protection diodes.
- Extremely Low vF
- High Surge Capacity
- Low Stored Charge, Majority
- TX Version Available
- Carrier Conduction Low Power Loss/ High Efficiency
Designer's Data for ~'Worst Case" Conditions
The Designers Data sheets permit the design of most circuits...