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MBR6035PF - SCHOTTKY RECTIFIERS

Key Features

  • epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectfiers in low-voltage, high frequency inverters, freewheeling diodes, and polarity-protection diodes. II.
  • Guaranteed Reverse Avalanche.
  • Guardring for dv/dt Stress Protection.
  • 150°C Operating Junction Temperature.
  • Low Forward Voltage SC!-IOTTKY.

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Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

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MBR6045 Power Rectifier
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MII6035PF M,BR60"45P.F ® MOTOROLA SWITCHMODE POWE~ RECTIFIERS · .. using a platinum barrier metal in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectfiers in low-voltage, high frequency inverters, freewheeling diodes, and polarity-protection diodes. II • Guaranteed Reverse Avalanche • Guardring for dv/dt Stress Protection • 150°C Operating Junction Temperature • Low Forward Voltage SC!-IOTTKY RECTIFIERS 50.