Overview
- Dual Diode Construction - Terminals 1 and 3 May Be Connected for Parallel Operation at Full Rating
- 45 Volt Blocking Voltage
- Low Forward Voltage Drop
- Guardring for Stress Protection and High dv/dt Capability (> 10 V/ns)
- Guaranteed Reverse Avalanche
- 150°C Operating Junction Temperature Mechanical Characteristics
- Case: Epoxy, Molded
- Weight: 4.3 grams (approximately)
- Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable
- Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds
Datasheets by Manufacturer
- VS-MBR6045WTPbF — Vishay — Schottky Rectifier
- MBR6045PT — Nell Power Semiconductor — Dual Common-Cathode Schottky Rectifie
- MBR6045PT — Digitron Semiconductors — 60 A SCHOTTKY RECTIFIER
- MBR6045 — Digitron Semiconductors — 60 A SCHOTTKY RECTIFIERS
- MBR60100 — Naina Semiconductor — Schottky Power Diode
- MBR6045R — America Semiconductor — Silicon Power Schottky Diode
- MBR6045 — GeneSiC — Silicon Power Schottky Diode
- MBR6045WT — Formosa MS — Power Schottky Barrier Rectifier
- VS-MBR6045WT-N3 — Vishay — Schottky Rectifier
- MBR6020R — Naina Semiconductor — Schottky Power Diode
