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MBRB2535CTL - Power Rectifier

Key Features

  • epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use in low voltage, high frequency switching power supplies, free wheeling diodes, and polarity protection diodes. These state.
  • of.
  • the.
  • art devices have the following features:.
  • Center.
  • Tap Configuration.
  • Guardring for Stress Protection.
  • Low Forward Voltage.
  • 125°C Operating Junction Temperature 4.
  • Epoxy Meets UL94, VO at 1/8″ 1.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MBRB2535CTL/D ™ Data Sheet SWITCHMODE™ Power D2PAK Surface Mount Power Package Rectifier MBRB2535CTL Motorola Preferred Device The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use in low voltage, high frequency switching power supplies, free wheeling diodes, and polarity protection diodes.