Datasheet Summary
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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SWITCHMODE™ Schottky Power Rectifier
The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal- to- silicon power diode. State- of- the- art geometry Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low- voltage, high- frequency switching power supplies, free wheeling diodes and polarity protection diodes.
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- Highly Stable Oxide Passivated Junction Very Low Forward Voltage Drop High Junction Temperature Capability High dv/dt Capability Excellent Ability to Withstand Reverse Avalanche Energy...
