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MBRF1045 - SWITCHMODE Schottky Power Rectifirers

Key Features

  • epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low.
  • voltage, high.
  • frequency switching power supplies, free wheeling diodes and polarity protection diodes.
  • Highly Stable Oxide Passivated Junction Very Low Forward Voltage Drop High Junction Temperature Capability High dv/dt Capability Excellent Ability to Withstand Reverse A.

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Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

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MBRF1545CT SWITCHMODE Schottky Power Rectifirers
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MBRF2045CT SWITCHMODE Schottky Power Rectifirer

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MBRF1045/D SWITCHMODE™ Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low–voltage, high–frequency switching power supplies, free wheeling diodes and polarity protection diodes. • • • • • • • • • Highly Stable Oxide Passivated Junction Very Low Forward Voltage Drop High Junction Temperature Capability High dv/dt Capability Excellent Ability to Withstand Reverse Avalanche Energy Transients Guardring for Stress Protection Epoxy Meets UL94, VO at 1/8″ Electrically Isolated.