MBRF20200CT Description
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MBRF20200CT/D SWITCHMODE™ Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal to silicon power diode. State of the art geometry.
MBRF20200CT Key Features
- Highly Stable Oxide Passivated Junction Very Low Forward Voltage Drop Matched Dual Die Construction High Junction Temper
- Case: Epoxy, Molded
- Weight: 1.9 grams (approximately)
- Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable
- Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds
- Shipped 50 units per plastic tube
- Marking: B20200 MAXIMUM RATINGS, PER LEG
- 65 to +150 10,000
- Junction to Case RθJC 3.5 °C/W
- 5.0 V, TC = 25°C, Freq. = 1.0 MHz) (1) Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0% CT 500 pF