MBRF745 Description
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MBRF745/D SWITCHMODE™ Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal to silicon power diode. State of the art geometry.
MBRF745 Key Features
- Highly Stable Oxide Passivated Junction Very Low Forward Voltage Drop High Junction Temperature Capability High dv/dt Ca
- Case: Epoxy, Molded
- Weight: 1.9 grams (approximately)
- Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable
- Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds
- Shipped 50 units per plastic tube
- Marking: B745 MAXIMUM RATINGS
- 65 to +150 10000 4500 3500 1500