MBRP20035L - SWITCHMODE Schottky Power Rectifirer

Datasheet Summary

Features

epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies, free wheeling diode and polarity protection diodes.
Very Low Forward Voltage Drop.
Highly Stable Oxide Passivated Junction.
Guardring for Stress Protection.
High dv/dt Capability Mechanical Characteristics:.
Dual Die Construction 1.
Case: Epoxy, Molded with Plated Copper Heatsink Base.
Wei.

Motorola

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Datasheet Details

Part number	MBRP20035L
Manufacturer	Motorola
File Size	55.59 KB
Description	SWITCHMODE Schottky Power Rectifirer
Datasheet	MBRP20035L Datasheet
Additional preview pages of the MBRP20035L datasheet.

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MBRP20035L/D Product Preview SWITCHMODE™ Schottky Power Rectifier POWERTAP III Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies, free wheeling diode and polarity protection diodes.

Published: Apr 26, 2005 |