MBRP20035L Datasheet | Motorola Semiconductor

features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies, free wheeling diode and polarity protection diodes. - Very Low Forward Voltage Drop - Highly Stable Oxide Passivated Junction - Guardring for Stress Protection - High dv/dt Capability Mechanical Characteristics: - Dual Die Construction 1 - Case: Epoxy, Molded with Plated Copper Heatsink Base - Weight: 40 grams (approximately) - Finish: All External Surfaces Corrosion Resistant 2 - Base Plate Torques: See procedure given in the Package Outline Section - Top Terminal Torque: 25- 40 lb- in max. - Shipped 50 units per foam - Marking: MBRP20035L MAXIMUM RATINGS Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (At Rated VR, TC = 100°C) Peak Repetitive Forward Current (At Rated VR, Square Wave, 20 k Hz, TC = 100°C) Non- Repetitive Peak Surge Current (Surge applied at rated load conditions, halfwave, single phase, 60 Hz) Peak Repetitive Reverse Surge Current (2.0 µs, 1.0 k Hz) Storage / Operating Case Temperature Operating Junction Temperature Voltage Rate of Change (Rated VR, TJ = 25°C) Symbol VRRM VRWM VR IO IFRM IFSM IRRM Tstg, TC TJ dv/dt SCHOTTKY BARRIER RECTIFIER 200 AMPERES 35 VOLTS POWERTAP III CASE 357D- 01 Value 35 Unit Volts 200 400 2000 2.0 Amps Amps Amps Amps °C °C V/µs - 55 to +150 - 55 to +150 10,000 0.45 THERMAL CHARACTERISTICS Thermal Resistance - Junction- to- Case RθJC TJ = 25°C 0.57 IR TJ = 25°C 10 °C/W ELECTRICAL CHARACTERISTICS Maximum Instantaneous Forward Voltage (1) (IF = 200 A) Maximum Instantaneous Reverse Current (VR = 35 V) (1) Pulse Test: Pulse Width VF TJ = 100°C 0.5 TJ = 100°C 250 m A Volts This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice. v 380 µs, Duty Cycle v 2%. POWERTAP III and SWITCHMODE are...