MBRP20035L Overview
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MBRP20035L/D Product Preview SWITCHMODE™ Schottky Power Rectifier POWERTAP III Package . employing the Schottky Barrier principle in a large area metal to silicon power diode. State of the art geometry.
MBRP20035L Key Features
- Very Low Forward Voltage Drop
- Highly Stable Oxide Passivated Junction
- Guardring for Stress Protection
- High dv/dt Capability Mechanical Characteristics
- Dual Die Construction 1
- Case: Epoxy, Molded with Plated Copper Heatsink Base
- Weight: 40 grams (approximately)
- Finish: All External Surfaces Corrosion Resistant 2
- Base Plate Torques: See procedure given in the Package Outline Section
- Top Terminal Torque: 25-40 lb-in max
