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MBRP20060CT - SCHOTTKY BARRIER RECTIFIER 200 AMPERES 60 VOLT

Key Features

  • epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies, free wheeling diode and polarity protection diodes.
  • Guardring for Stress Protection.
  • Matched dual die construction.
  • May be Paralleled for High Current Output.
  • High dv/dt Capability.
  • Very Low Forward Voltage Drop Mechanical Characteristics:.
  • Case: Epoxy, Molded with Metal Heatsink Base.
  • Wei.

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MBRP20060CT/D ™ Data Sheet SWITCHMODE™ Designer's MBRP20060CT SCHOTTKY BARRIER RECTIFIER 200 AMPERES 60 VOLTS Schottky Power Rectifier POWERTAP™ II Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies, free wheeling diode and polarity protection diodes.