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MBRS130 - Schottky Power Rectifier

Key Features

  • epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes, in surface mount.

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Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
MBRS130LT3 Schottky Power Rectifier
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Full PDF Text Transcription (Reference)

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MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MBRS130LT3/D Schottky Power Rectifier Surface Mount Power Package . . . Employs the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes, in surface mount applications where compact size and weight are critical to the system. • • • • Very Low Forward Voltage Drop (0.395 Volts Max @ 1.