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MBRV7030CTL - SWIRCHMODE Schottky Power Rectifier

Features

  • epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection diodes.
  • Compact Package Ideal for Automated Handling 1.
  • Short Heat Sink Tab Manufactured.
  • Not Sheared 3.
  • Highly Stable Oxide Passivated Junction.
  • Guardring for Over.
  • voltage Protection.
  • Low Forward Voltage Drop.
  • Monolithic Dual Die Constr.

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Full PDF Text Transcription

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MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MBRV7030CTL/D ™ Data Sheet SWITCHMODE™ MBRV7030CTL Motorola Preferred Device Schottky Power Rectifier D3PAK Power Surface Mount Package Employing the Schottky Barrier principle in a large area metal–to–silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection diodes. • Compact Package Ideal for Automated Handling 1 • Short Heat Sink Tab Manufactured — Not Sheared 3 • Highly Stable Oxide Passivated Junction • Guardring for Over–voltage Protection • Low Forward Voltage Drop • Monolithic Dual Die Construction. May be Paralleled for High Current Output.
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