MC33153 Datasheet | Motorola Semiconductor

Order this document by MC33153/D Single IGBT Gate Driver The MC33153 is specifically designed as an IGBT driver for high power applications that include ac induction motor control, brushless dc motor control and uninterruptable power supplies. Although designed for driving discrete and module IGBTs, this device offers a cost effective solution for driving power MOSFETs and Bipolar Transistors. Device protection Features include the choice of desaturation or overcurrent sensing and undervoltage detection. These devices are available in dual- in- line and surface mount packages and include the following Features : MC33153 SINGLE IGBT GATE DRIVER SEMICONDUCTOR TECHNICAL DATA - - - - - - - High Current Output Stage: 1.0 A Source/2.0 A Sink Protection Circuits for Both Conventional and Sense IGBTs Programmable Fault Blanking Time Protection against Overcurrent and Short Circuit Undervoltage Lockout Optimized for IGBT’s Negative Gate Drive Capability Cost Effectively Drives Power MOSFETs and Bipolar Transistors 8 1 P SUFFIX PLASTIC PACKAGE CASE 626 Representative Block Diagram VCC 6 VCC Fault Output 7 VEE Short Circuit Latch S Q R Overcurrent Latch S Q R VCC Short Circuit parator VCC Overcurrent parator 130 mV 65 mV VCC 270 µA VEE VCC Current Sense 1 Input Kelvin Gnd 8 1 D SUFFIX PLASTIC PACKAGE CASE 751 (SO- 8) PIN CONNECTIONS Current Sense Input Kelvin Gnd VEE Input 8 Fault Blanking/ Desaturation Input 7 Fault Output 6 VCC 5 Drive Output 2 Fault Blanking/ Desaturation parator 6.5 V VEE Fault 8 Blanking/ Desaturation Input 1 2 3 4 VCC VCC Input 4 VEE Output Stage Drive 5 Output 100 k VCC Under Voltage Lockout (Top View) VEE 12 V/ 11 V 3 VEE...