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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Advance Information
4M Late Write HSTL
The MCM69L736A/818A is a 4M synchronous late write fast static RAM designed to provide high performance in secondary cache and ATM switch, Telecom, and other high speed memory applications. The MCM69L818A (organized as 256K words by 18 bits) and the MCM69L736A (organized as 128K words by 36 bits) are fabricated in Motorola’s high performance silicon gate BiCMOS technology.
The differential clock (CK) inputs control the timing of read/write operations of the RAM. At the rising edge of CK, all addresses, write enables, and synchronous selects are registered. An internal buffer and special logic enable the memory to accept write data on the rising edge of CK a cycle after address and control signals.
MCM69L818A Datasheet
